, d na. 20 stern ave. springfield, new jersey 07081 u.s.a. silicon npn power transistor telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 BU931P description ? high voltage ? darlington applications ? high ruggedness electronic ignitions ? high voltage ignition coil driver absolute maximum ratings (ta=25'c) thermal characteristics symbol rth j-c parameter thermal resistance, junction to case max 1.1 symbol vcbo vceo vebo ic icm ib ibm pc tj tstg parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current collector current-peak base current base current-peak collector power dissipation @tc=25c junction temperature storage temperature range value 500 400 5 15 30 1 5 135 175 -65-175 unit v v v a a a a w r r unit ?c/w i 1 2 3 u0 ?. 1, h f 2.collector 3. better to-3pn package ?. c dm a b c d e f g h j k l n q r s u mm m 19.90 15.50 4.70 0,90 1.90 3.40 2.90 3.20 0.595 20.50 1.90 10.89 4.90 3.35 1.995 5.90 y i 9.90 max 20.10 15.70 4.90 1.10 2,10 3,60 3.10 3.40 0.605 20.70 2.10 40.91 5.10 3.45 2.005 6.10 10.10 quality semi-conductors ??-? o
electrical characteristics tc=25'c unless otherwise specified symbol vceo(sus) vce(sat)-1 v ce(sat)-2 vce(sat)-3 vae(sat)-1 v be(sat)-2 v be(sat)-3 ices i ceo iebo hfe vecf parameter collector-emitter sustaining voltage collector-emitter saturation voltage collector-emitter saturation voltage collector-emitter saturation voltage base-emitter saturation voltage base-emitter saturation voltage base-emitter saturation voltage collector cutoff current collector cutoff current emitter cutoff current dc current gain c-e diode forward voltage conditions lc=0.1a; lb=0;l=10mh lc= 7a; ib= 70ma lc=8a;lb=100ma lc= 10a;lb=250ma lc= 7a; ib= 70ma |c=8a; ib= 100ma ic^ 10a; ib= 250ma vce= 500v;vbe= 0 vce= 500v;vbe= 0;tj= 125c vce= 450v; ib= 0 vce=450v;lb=0;ti=125-c veb= 5v; lc= 0 lc=5a;vce=10v if= 10a min 400 300 typ, max 1.6 1.8 1.8 2.2 2.4 2.5 0.1 0.5 0.1 0.5 20 2.5 unit v v v v v v v ma ma ma v
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